![](/img/cover-not-exists.png)
TCAD simulation of a double L-shaped gate tunnel field-effect transistor with a covered sourceâchannel
Xie, Haiwu, Liu, Hongxia, Han, Tao, Li, Wei, Chen, Shupeng, Wang, ShulongVolume:
15
Journal:
Micro & Nano Letters
DOI:
10.1049/mnl.2019.0398
Date:
April, 2020
File:
PDF, 573 KB
2020