Analysis of useful ion yield for Si in GaN by secondary ion...

Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures 2020 / 07 Vol. 38; Iss. 4

Analysis of useful ion yield for Si in GaN by secondary ion mass spectrometry

Senevirathna, M. K. Indika, Vernon, Mark, Cooke, Graham A., Cross, Garnett B., Kozhanov, Alexander, Williams, Michael D.
How much do you like this book?
What’s the quality of the file?
Download the book for quality assessment
What’s the quality of the downloaded files?
Volume:
38
Journal:
Journal of Vacuum Science & Technology B
DOI:
10.1116/6.0000138
Date:
July, 2020
File:
PDF, 1.33 MB
2020
Conversion to is in progress
Conversion to is failed