Effect of Gate-Oxide Degradation on Electrical Parameters of Silicon Carbide MOSFETs
Karki, Ujjwal, Gonzalez-Santini, Nomar S., Peng, Fang Z.Volume:
67
Journal:
IEEE Transactions on Electron Devices
DOI:
10.1109/TED.2020.2990128
Date:
June, 2020
File:
PDF, 1.72 MB
2020