Hydride vapor phase epitaxy of Si-doped AlN layers using SiCl4 as a doping gas
Yamamoto, Reo, Takekawa, Nao, Goto, Ken, Nagashima, Toru, Dalmau, Rafael, Schlesser, Raoul, Murakami, Hisashi, Collazo, Ramón, Monemar, Bo, Sitar, Zlatko, Kumagai, YoshinaoJournal:
Journal of Crystal Growth
DOI:
10.1016/j.jcrysgro.2020.125730
Date:
May, 2020
File:
PDF, 1.37 MB
2020
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