Demonstration of Ferroelectricity in Al-doped HfO2 with a...

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IEEE Electron Device Letters 2020

Demonstration of Ferroelectricity in Al-doped HfO2 with a Low Thermal Budget of 500 °C

Zhou, Jiuren, Zhou, Zuopu, Wang, Xinke, Wang, Haibo, Sun, Chen, Han, Kaizhen, Kang, Yuye, Gong, Xiao
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Year:
2020
Journal:
IEEE Electron Device Letters
DOI:
10.1109/LED.2020.2998355
File:
PDF, 750 KB
2020
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