Modeling the Influence of the Acceptor-Type Trap on the...

IEEE Transactions on Electron Devices 2020 / 6 Vol. 67; Iss. 6

Modeling the Influence of the Acceptor-Type Trap on the 2DEG Density for GaN MIS-HEMTs

Shi, Yijun, Chen, Wanjun, Sun, Ruize, Liu, Chao, Xin, Yajie, Xia, Yun, Wang, Fangzhou, Xu, Xiaorui, Deng, Xiaochuan, Chen, Tangsheng, Zhang, Bo
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Volume:
67
Journal:
IEEE Transactions on Electron Devices
DOI:
10.1109/TED.2020.2986241
Date:
June, 2020
File:
PDF, 3.07 MB
2020
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