Temperature dependence of double Shockley stacking fault behavior in nitrogen-doped 4H-SiC studied by in-situ synchrotron X-ray topography
Fujie, Fumihiro, Harada, Shunta, Hanada, Kenji, Suo, Hiromasa, Koizumi, Haruhiko, Kato, Tomohisa, Tagawa, Miho, Ujihara, ToruJournal:
Acta Materialia
DOI:
10.1016/j.actamat.2020.04.019
Date:
May, 2020
File:
PDF, 1.79 MB
2020
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