Ab initio calculations for the effect of wet oxidation...

Japanese Journal of Applied Physics 2020 / 07 Vol. 59; Iss. SM

Ab initio calculations for the effect of wet oxidation condition on the reaction mechanism at 4H–SiC/SiO 2 interface

Shimizu, Tsunashi, Akiyama, Toru, Pradipto, Abdul-Muizz, Nakamura, Kohji, Ito, Tomonori, Kageshima, Hiroyuki, Uematsu, Masashi, Shiraishi, Kenji
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Volume:
59
Journal:
Japanese Journal of Applied Physics
DOI:
10.35848/1347-4065/ab85dd
Date:
July, 2020
File:
PDF, 1.11 MB
2020
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