Optoelectronic properties of lateral MoS2 p-n Homojunction...

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Journal of Physics D Applied Physics 2020 / 06

Optoelectronic properties of lateral MoS2 p-n Homojunction implemented by selective p‑type doping using nitrogen plasma

Jin, Wen, Zeng, Xiangbin, Guo, Zhenyu, Zeng, Yang, Wang, Wenzhao, Zeng, Yirong, Hu, Yishuo, Xiao, Yonghong, Lu, Jichang, Lu, Jingjing, Wang, Junhao
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Journal:
Journal of Physics D: Applied Physics
DOI:
10.1088/1361-6463/ab985d
Date:
June, 2020
File:
PDF, 1.01 MB
2020
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