High electron density β -(Al 0.17 Ga 0.83 ) 2 O 3 /Ga 2 O 3 modulation doping using an ultra-thin (1ânm) spacer layer
Kalarickal, Nidhin Kurian, Xia, Zhanbo, McGlone, Joe F., Liu, Yumo, Moore, Wyatt, Arehart, Aaron R., Ringel, Steven A., Rajan, SiddharthVolume:
127
Journal:
Journal of Applied Physics
DOI:
10.1063/5.0005531
Date:
June, 2020
File:
PDF, 1.64 MB
2020