Ballistic Transport in High-performance and Low-power Sub-5...

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IEEE Electron Device Letters 2020

Ballistic Transport in High-performance and Low-power Sub-5 nm Two-dimensional ZrNBr MOSFETs

Qu, Hengze, Zhang, Shengli, Zhou, Wenhan, Guo, Shiying, Zeng, Haibo
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Year:
2020
Journal:
IEEE Electron Device Letters
DOI:
10.1109/LED.2020.3000052
File:
PDF, 851 KB
2020
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