MoS 2 -based ferroelectric...

AIP Advances 2020 / 06 Vol. 10; Iss. 6

MoS 2 -based ferroelectric field-effect transistor with atomic layer deposited Hf 0.5 Zr 0.5 O 2 films toward memory applications

Cha, Ming-Yang, Liu, Hao, Wang, Tian-Yu, Chen, Lin, Zhu, Hao, Ji, Li, Sun, Qing-Qing, Zhang, David Wei
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Volume:
10
Journal:
AIP Advances
DOI:
10.1063/5.0010829
Date:
June, 2020
File:
PDF, 3.82 MB
2020
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