Surface Emitting Devices Based on a Semiconductor Coupled...

IEICE Transactions on Electronics 2017 Vol. E100.C; Iss. 2

Surface Emitting Devices Based on a Semiconductor Coupled Multilayer Cavity for Novel Terahertz Light Sources

KITADA, Takahiro, OTA, Hiroto, LU, Xiangmeng, KUMAGAI, Naoto, ISU, Toshiro
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Volume:
E100.C
Year:
2017
Journal:
IEICE Transactions on Electronics
DOI:
10.1587/transele.E100.C.171
File:
PDF, 2.27 MB
2017
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