X-ray imaging and spectroscopy of nitrogen in the SiO2/SiC...

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Applied Physics Express 2020 / 06

X-ray imaging and spectroscopy of nitrogen in the SiO2/SiC interface of the 4H–SiC MOSFET trench sidewalls

Isomura, Noritake, Kitazumi, Kousuke, Kataoka, Keita, KUTSUKI, Katsuhiro, Watanabe, Yukihiko
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Journal:
Applied Physics Express
DOI:
10.35848/1882-0786/ab9ba4
Date:
June, 2020
File:
PDF, 1.25 MB
2020
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