The impact of mesa etching method on IR photodetector...

Materials Science in Semiconductor Processing 2020 / 11 Vol. 118

The impact of mesa etching method on IR photodetector current-voltage characteristics

Smoczyński, Dariusz, Czuba, Krzysztof, Papis-Polakowska, Ewa, Kozłowski, Paweł, Ratajczak, Jacek, Sankowska, Iwona, Jasik, Agata
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Volume:
118
Journal:
Materials Science in Semiconductor Processing
DOI:
10.1016/j.mssp.2020.105219
Date:
November, 2020
File:
PDF, 1.67 MB
2020
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