Structural changes due to reannealing of Ge thin films...

Thin Solid Films 2020 / 09 Vol. 709

Structural changes due to reannealing of Ge thin films prepared by solid phase epitaxial growth on Si (111) surface

Ishii, Chiaki, Shigeta, Yukichi
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Volume:
709
Journal:
Thin Solid Films
DOI:
10.1016/j.tsf.2020.138007
Date:
September, 2020
File:
PDF, 4.12 MB
2020
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