Reduction of unintentional Si doping in β...

Journal of Vacuum Science & Technology A Vacuum Surfaces and Films 2020 / 07 Vol. 38; Iss. 4

Reduction of unintentional Si doping in β -Ga 2 O 3 grown via plasma-assisted molecular beam epitaxy

Asel, Thaddeus J., Steinbrunner, Erich, Hendricks, Jessica, Neal, Adam T., Mou, Shin
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Volume:
38
Journal:
Journal of Vacuum Science & Technology A
DOI:
10.1116/6.0000086
Date:
July, 2020
File:
PDF, 2.63 MB
2020
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