Doping-induced ferromagnetism in InSe and SnO monolayers

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Doping-induced ferromagnetism in InSe and SnO monolayers

Houssa, M., Meng, R., Iordanidou, K., Pourtois, G., Afanas’ev, V. V., Stesmans, A.
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Journal:
Journal of Computational Electronics
DOI:
10.1007/s10825-020-01535-0
Date:
June, 2020
File:
PDF, 1.53 MB
2020
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