[IEEE 2020 4th IEEE Electron Devices Technology & Manufacturing Conference (EDTM) - Penang, Malaysia (2020.4.6-2020.4.21)] 2020 4th IEEE Electron Devices Technology & Manufacturing Conference (EDTM) - Performance Comparison of Ge/Si Hetero-Junction Vertical Tunnel FET with and Without Gate-Drain Underlapped Structure with Application to Digital Inverter
Tripathy, Manas R., Singh, Ashish K., Samad, A, Baral, Kamalaksha, Singh, Prince K., Jit, SatyabrataYear:
2020
DOI:
10.1109/EDTM47692.2020.9117840
File:
PDF, 445 KB
2020