Effects of Low-Damage Plasma Treatment on the Channel 2DEG and Device Characteristics of AlGaN/GaN HEMTs
Bao, SiQin-GaoWa, Zhu, Jie-Jie, Ma, Xiao-Hua, Hou, Bin, Yang, Ling, Chen, Li-Xiang, Zhu, Qing, Hao, YueVolume:
37
Journal:
Chinese Physics Letters
DOI:
10.1088/0256-307X/37/2/027301
Date:
February, 2020
File:
PDF, 1.02 MB
2020