Study on Gate Bias Voltage Application Conditions to Prevent the Knee Voltage Shift of the SiCâMOSFET Body Diode Depending on Gate Bias Voltage during Transient Temperature Measurements
Kato, Fumiki, Sato, Shinji, Tanisawa, Hidekazu, Hozoji, Hiroshi, Yamaguchi, Hiroshi, Sato, HiroshiVolume:
13
Year:
2020
Journal:
Transactions of The Japan Institute of Electronics Packaging
DOI:
10.5104/jiepeng.13.e19-011-1
File:
PDF, 877 KB
2020