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Effect of high-temperature annealing on GaInP/GaAs HBT structures grown by LP-MOVPE
F. Brunner, E. Richter, T. Bergunde, I. Rechenberg, A. Bhattacharya, A. Maassdorf, J. W. Tomm, P. Kurpas, M. Achouche, J. Würfl, M. WeyersVolume:
29
Year:
2000
Language:
english
Pages:
5
DOI:
10.1007/s11664-000-0143-z
File:
PDF, 155 KB
english, 2000