Structural and electrical properties of unintentionally doped 4H-SiC epitaxial layers—Grown by hot-wall CVD
G. Wagner, B. Thomas, J. Doerschel, J. Dolle, K. IrmscherVolume:
30
Year:
2001
Language:
english
Pages:
5
DOI:
10.1007/s11664-001-0017-z
File:
PDF, 999 KB
english, 2001