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Effects of process parameter variations on the removal rate in chemical mechanical polishing of 4H-SiC
C. L. Neslen, W. C. Mitchel, R. L. HengeholdVolume:
30
Year:
2001
Language:
english
Pages:
5
DOI:
10.1007/s11664-001-0111-2
File:
PDF, 1.72 MB
english, 2001