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Nickel silicide as a contact material for submicron CMOS...

Journal of Electronic Materials 2001 Vol. 30; Iss. 12

Nickel silicide as a contact material for submicron CMOS devices

D. Z. Chi, D. Mangelinck, A. S. Zuruzi, A. S. W. Wong, S. K. Lahiri
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Volume:
30
Year:
2001
Language:
english
Pages:
6
DOI:
10.1007/s11664-001-0162-4
File:
PDF, 1.22 MB
english, 2001
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