![](/img/cover-not-exists.png)
Mechanism of hemispherical-grained Si formation for dynamic random access memory cells by rapid thermal chemical vapor deposition
S. Berger, A. Captain, H. Spiellberg, E. Iskevitch, S. LeviVolume:
30
Year:
2001
Language:
english
Pages:
5
DOI:
10.1007/s11664-001-0170-4
File:
PDF, 1.52 MB
english, 2001