Mechanisms of dislocation reduction in GaN using an intermediate temperature interlayer
E. D. Bourret-Courchesne, K. M. Yu, M. Benamara, Z. Liliental-Weber, J. WashburnVolume:
30
Year:
2001
Language:
english
Pages:
4
DOI:
10.1007/s11664-001-0194-9
File:
PDF, 1.80 MB
english, 2001