High-purity semi-insulating 4H-SiC grown by the...

Journal of Electronic Materials 2002 Vol. 31; Iss. 5

High-purity semi-insulating 4H-SiC grown by the seeded-sublimation method

J. R. Jenny, St G. Müller, A. Powell, V. F. Tsvetkov, H. M. Hobgood, R. C. Glass, C. H. Carter
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Volume:
31
Year:
2002
Language:
english
Pages:
4
DOI:
10.1007/s11664-002-0084-9
File:
PDF, 202 KB
english, 2002
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