![](/img/cover-not-exists.png)
Microstructure of GaN deposited by lateral confined epitaxy on patterned Si (111)
Feng Wu, Shai Zamir, Boris Meyler, Joseph Salzman, Yuval GolanVolume:
31
Year:
2002
Language:
english
Pages:
6
DOI:
10.1007/s11664-002-0178-4
File:
PDF, 905 KB
english, 2002