Incorporation of dielectric layers into the processing of...

Journal of Electronic Materials 2003 Vol. 32; Iss. 5

Incorporation of dielectric layers into the processing of III-nitride-based heterostructure field-effect transistors

D. Mistele, T. Rotter, A. Horn, O. Katz, Z. Bougrioua, J. Aderhold, J. Graul, G. Bahir, J. Salzman
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Volume:
32
Year:
2003
Language:
english
Pages:
9
DOI:
10.1007/s11664-003-0158-3
File:
PDF, 272 KB
english, 2003
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