Compositional changes in erbium-implanted GaN films due to...

Journal of Electronic Materials 2003 Vol. 32; Iss. 5

Compositional changes in erbium-implanted GaN films due to annealing

J. M. Zavada, R. G. Wilson, U. Hömmerich, M. Thaik, J. T. Seo, C. J. Ellis, J. Y. Lin, H. X. Jiang
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Volume:
32
Year:
2003
Language:
english
Pages:
6
DOI:
10.1007/s11664-003-0162-7
File:
PDF, 136 KB
english, 2003
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