Correlation of device performance and defects in AlGaN/GaN...

Journal of Electronic Materials 2003 Vol. 32; Iss. 5

Correlation of device performance and defects in AlGaN/GaN high-electron mobility transistors

A. P. Zhang, L. B. Rowland, E. B. Kaminsky, V. Tilak, J. C. Grande, J. Teetsov, A. Vertiatchikh, L. F. Eastman
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Volume:
32
Year:
2003
Language:
english
Pages:
7
DOI:
10.1007/s11664-003-0163-6
File:
PDF, 978 KB
english, 2003
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