Microstructure of GaN grown by lateral confined epitaxy 2....

Microstructure of GaN grown by lateral confined epitaxy 2. GaN on patterned sapphire

Feng Wu, Shai Zamir, Boris Meyler, Joseph Salzman, Yuval Golan
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Volume:
32
Year:
2003
Language:
english
Pages:
6
DOI:
10.1007/s11664-003-0248-2
File:
PDF, 1.46 MB
english, 2003
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