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Time and temperature dependence on rapid thermal annealing of molecular beam epitaxy grown Ga0.8In0.2N0.01As0.99quantum wells analyzed using photoluminescence
Sridhar Govindaraju, Jason M. Reifsnider, Michael M. Oye, Archie L. HolmesVolume:
32
Year:
2003
Language:
english
Pages:
5
DOI:
10.1007/s11664-003-0249-1
File:
PDF, 325 KB
english, 2003