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Unpassivated GaN/AlGaN/GaN power high electron mobility transistors with dispersion controlled by epitaxial layer design
L. Shen, R. Coffie, D. Buttari, S. Heikman, A. Chakraborty, A. Chini, S. Keller, S. P. Denbaars, U. K. MishraVolume:
33
Year:
2004
Language:
english
Pages:
4
DOI:
10.1007/s11664-004-0195-6
File:
PDF, 252 KB
english, 2004