Lateral schottky GaN rectifiers formed by Si+ion...

Journal of Electronic Materials 2004 Vol. 33; Iss. 5

Lateral schottky GaN rectifiers formed by Si+ion implantation

Y. Irokawa, Jihyun Kim, F. Ren, K. H. Baik, B. P. Gila, C. R. Abernathy, S. J. Pearton, C. -C. Pan, G. -T. Chen, J. -I. Chyi
How much do you like this book?
What’s the quality of the file?
Download the book for quality assessment
What’s the quality of the downloaded files?
Volume:
33
Year:
2004
Language:
english
Pages:
5
DOI:
10.1007/s11664-004-0196-5
File:
PDF, 161 KB
english, 2004
Conversion to is in progress
Conversion to is failed