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Rapid thermal annealing effects on the photoluminescence properties of molecular beam epitaxy-grown GaIn(N)As quantum wells with Ga(N)As spacers and barriers
Sridhar Govindaraju, Jason M. Reifsnider, Michael M. Oye, Archie L. HolmesVolume:
33
Year:
2004
Language:
english
Pages:
10
DOI:
10.1007/s11664-004-0211-x
File:
PDF, 1.39 MB
english, 2004