Electron and hole traps in GaN p-i-n photodetectors grown...

Journal of Electronic Materials 2000 / 09 Vol. 29; Iss. 9

Electron and hole traps in GaN p-i-n photodetectors grown by reactive molecular beam epitaxy

Z-Q. Fang, D. C. Look, C. Lu, H. Morkoç
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Volume:
29
Language:
english
Pages:
1
DOI:
10.1007/s11664-004-0274-8
Date:
September, 2000
File:
PDF, 155 KB
english, 2000
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