Investigation of microstructure and V-defect formation in...

Journal of Electronic Materials 2005 Vol. 34; Iss. 5

Investigation of microstructure and V-defect formation in InxGa1−xN/GaN MQW grown using temperature-gradient metalorganic chemical vapor deposition

M. C. Johnson, Z. Liliental-Weber, D. N. Zakharov, D. E. Mccready, R. J. Jorgenson, J. Wu, W. Shan, E. D. Bourret-Courchesne
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Volume:
34
Year:
2005
Language:
english
Pages:
7
DOI:
10.1007/s11664-005-0072-y
File:
PDF, 363 KB
english, 2005
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