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The effects of oxygen, nitrogen, and hydrogen annealing on Mg acceptors in GaN as monitored by electron paramagnetic resonance spectroscopy
D. M. Matlock, M. E. Zvanut, Haiyan Wang, Jeffrey R. Dimaio, R. F. Davis, J. E. van Nostrand, R. L. Henry, Daniel Koleske, Alma WickendenVolume:
34
Year:
2005
Language:
english
Pages:
6
DOI:
10.1007/s11664-005-0177-3
File:
PDF, 98 KB
english, 2005