Memory Effect of Metal-Insulator-Silicon Capacitor with...

Journal of Electronic Materials 2007 / 03 Vol. 36; Iss. 3

Memory Effect of Metal-Insulator-Silicon Capacitor with HfO2-Al2O3Multilayer and Hafnium Nitride Gate

Shi-Jin Ding, Min Zhang, Wei Chen, David Wei Zhang, Li-Kang Wang
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Volume:
36
Language:
english
Pages:
5
DOI:
10.1007/s11664-006-0003-6
Date:
March, 2007
File:
PDF, 416 KB
english, 2007
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