Improved Long-Term Thermal Stability At 350°C Of TiB2–Based...

Journal of Electronic Materials 2007 / 04 Vol. 36; Iss. 4

Improved Long-Term Thermal Stability At 350°C Of TiB2–Based Ohmic Contacts On AlGaN/GaN High Electron Mobility Transistors

Rohit Khanna, L. Stafford, S.J. Pearton, T.J. Anderson, F. Ren, I.I. Kravchenko, Amir Dabiran, A. Osinsky, Joon Yeob Lee, Kwan-Young Lee, Jihyun Kim
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Volume:
36
Language:
english
Pages:
5
DOI:
10.1007/s11664-006-0036-x
Date:
April, 2007
File:
PDF, 462 KB
english, 2007
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