Pure germanium epitaxial growth on thin strained silicon-germanium graded layers on bulk silicon substrate for high-mobility channel metal-oxide-semiconductor field-effect transistors
S. Dey, S. Joshi, D. Garcia-Gutierrez, M. Chaumont, A. Campion, M. Jose-Yacaman, S. K. BanerjeeVolume:
35
Year:
2006
Language:
english
Pages:
6
DOI:
10.1007/s11664-006-0205-y
File:
PDF, 437 KB
english, 2006