1200 V 4H-SiC Bipolar Junction Transistors with A Record β...

Journal of Electronic Materials 2008 / 05 Vol. 37; Iss. 5

1200 V 4H-SiC Bipolar Junction Transistors with A Record β of 70

Charlotte Jonas, Craig Capell, Al Burk, Qingchun Zhang, Robert Callanan, Anant Agarwal, Bruce Geil, Charles Scozzie
How much do you like this book?
What’s the quality of the file?
Download the book for quality assessment
What’s the quality of the downloaded files?
Volume:
37
Language:
english
Pages:
4
DOI:
10.1007/s11664-007-0331-1
Date:
May, 2008
File:
PDF, 331 KB
english, 2008
Conversion to is in progress
Conversion to is failed