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1200 V 4H-SiC Bipolar Junction Transistors with A Record β of 70
Charlotte Jonas, Craig Capell, Al Burk, Qingchun Zhang, Robert Callanan, Anant Agarwal, Bruce Geil, Charles ScozzieVolume:
37
Language:
english
Pages:
4
DOI:
10.1007/s11664-007-0331-1
Date:
May, 2008
File:
PDF, 331 KB
english, 2008