Novel Quantum Dot Gate FETs and Nonvolatile Memories Using...

Journal of Electronic Materials 2009 / 08 Vol. 38; Iss. 8

Novel Quantum Dot Gate FETs and Nonvolatile Memories Using Lattice-Matched II–VI Gate Insulators

F. C. Jain, E. Suarez, M. Gogna, F. Alamoody, D. Butkiewicus, R. Hohner, T. Liaskas, S. Karmakar, P.-Y. Chan, B. Miller, J. Chandy, E. Heller
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Volume:
38
Language:
english
Pages:
5
DOI:
10.1007/s11664-009-0755-x
Date:
August, 2009
File:
PDF, 478 KB
english, 2009
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