Using Phosphorus-Doped α-Si Gettering Layers to Improve...

Journal of Electronic Materials 2010 / 02 Vol. 39; Iss. 2

Using Phosphorus-Doped α-Si Gettering Layers to Improve NILC Poly-Si TFT Performance

Bau-Ming Wang, YewChung Sermon Wu
How much do you like this book?
What’s the quality of the file?
Download the book for quality assessment
What’s the quality of the downloaded files?
Volume:
39
Language:
english
Pages:
5
DOI:
10.1007/s11664-009-1027-5
Date:
February, 2010
File:
PDF, 320 KB
english, 2010
Conversion to is in progress
Conversion to is failed