Generation of Defects in Heavily Al-Doped 4H-SiC Epitaxial...

Journal of Electronic Materials 2010 / 05 Vol. 39; Iss. 5

Generation of Defects in Heavily Al-Doped 4H-SiC Epitaxial Layers Grown by the Low-Temperature Halo-Carbon Method

Hrishikesh Das, Bharat Krishnan, Siva Prasad Kotamraju, Yaroslav Koshka
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Volume:
39
Language:
english
Pages:
6
DOI:
10.1007/s11664-010-1099-2
Date:
May, 2010
File:
PDF, 915 KB
english, 2010
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