Investigation of Trap States in AlInN/AlN/GaN...

Journal of Electronic Materials 2010 / 12 Vol. 39; Iss. 12

Investigation of Trap States in AlInN/AlN/GaN Heterostructures by Frequency-Dependent Admittance Analysis

Engin Arslan, Serkan Bütün, Yasemin Şafak, Ekmel Ozbay
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Volume:
39
Language:
english
Pages:
6
DOI:
10.1007/s11664-010-1367-1
Date:
December, 2010
File:
PDF, 422 KB
english, 2010
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