Influence of high dielectric HfO2 thin films on the electrical properties of Al/HfO2/n-Si (MIS) structured Schottky barrier diodes
Harishsenthil, P., Chandrasekaran, J., R.Marnadu,, Balraju, P., Mahendarn, C.Journal:
Physica B: Condensed Matter
DOI:
10.1016/j.physb.2020.412336
Date:
June, 2020
File:
PDF, 5.05 MB
2020