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Nonvolatile Memory Effect in Indium Gallium Arsenide-Based Metal–Oxide–Semiconductor Devices Using II–VI Tunnel Insulators
P.-Y. Chan, M. Gogna, E. Suarez, S. Karmakar, F. Al-Amoody, B. I. Miller, F. C. JainVolume:
40
Language:
english
Pages:
4
DOI:
10.1007/s11664-011-1655-4
Date:
August, 2011
File:
PDF, 256 KB
english, 2011